GT60J322 2002-01-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT60J322 the 4th generation soft switching applications enhancement-mode low saturation voltage: v ce (sat) = 1.25 v (typ.) (i c = 60 a) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 25 v dc i c 60 collector current 1 ms i cp 120 a dc i ecf 60 emitter-collector forward current 1 ms i ecpf 120 a collector power dissipation (tc 25c) p c 200 w junction temperature t j 150 c storage temperature range t stg 55~150 c screw torque 0.8 n ? m equivalent circuit unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) gate emitter collector
GT60J322 2002-01-18 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 25 v, v ce 0 500 na collector cut-off current i ces v ce 600 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 60 ma, v ce 5 v 3.0 6.0 v v ce (sat) (1) i c 10 a, v ge 15 v 0.95 1.45 collector-emitter saturation voltage v ce (sat) (2) i c 60 a, v ge 15 v 1.25 1.65 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 13500 pf rise time t r 0.25 turn-on time t on 0.35 fall time t f 1.00 1.50 switching time turn-off time t off 1.50 s forward voltage v f i f 60 a, v ge 0 1.2 1.6 v reverse recovery time t rr i f 60 a, v ge 0, di/dt 100 a/ s 0.6 1.0 s thermal resistance (igbt) r th (j-c) 0.625 c/w thermal resistance (diode) r th (j-c) 0.96 c/w 0 15 v 15 v 300 v 5 18
GT60J322 2002-01-18 3 collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 0 4 8 12 16 6 0 2 4 8 10 common emitter tc 40c i c 10 a 30 20 60 120 0 4 8 12 16 6 0 2 4 8 10 common emitter tc 25c i c 10 a 30 20 60 120 0 4 8 12 16 6 0 2 4 8 10 common emitter tc 125c i c 10 a 30 20 60 120 0 4 8 12 16 60 0 20 40 80 100 common emitter v ce 5 v 20 tc 125c 25 40 0 0.4 0.8 1.2 1.6 60 0 20 40 80 100 common emitter tc 25c 2.0 v ge 8 v 20 10 15 3 2 1 0 40 40 80 120 160 common emitter v ge 15 v 120 i c 10 a 30 60
GT60J322 2002-01-18 4 switching time ( s) collector current i c (a) gate resistance r g ( ) switching time ? r g switching time ( s) collector-emitter voltage v ce (v) safe operating area collector current i c (a) switching time ? i c 0 100 200 300 400 12 0 4 8 16 20 common emitter r l 5 tc 25c 500 1 3 10 50 300 500 30 100 300 1000 3000 100 3000 5000 1000 30000 50000 10000 common emitter v ge 0 f 1 mhz tc 25c c ies c oes c res collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce ( 25 v) gate-emitter voltage v ge (v) 3 5 10 0.1 0.3 0.5 1 3 5 common emitter v cc 300 v v gg 15 v i c 60 a tc 25c t of f t f t r t on 30 50 100 300 0.05 20 0.5 0 40 60 80 0.1 0.3 1 3 common emitter v cc 300 v r g 18 v gg 15 v tc 25c t of f t r t f t on 0.1 3 0.3 1 10 30 100 300 1000 0.5 1 5 3 10 50 30 100 300 * : single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. dc operation i c max (pulsed) i c max (continuous) 10 ms * 1 ms * 100 s * 10 s *
GT60J322 2002-01-18 5 junction capacitance c j (pf) peak reverse recovery current i rr (a) forward voltage v f (v) i f v f forward current i f (a) reverse recovery time t rr (ns) forward current i f (a) i rr t rr , if reverse voltage v r (v) c j v r 100 80 60 40 20 0 2.0 0 0.4 0.8 1.2 1.6 tc 125c 40 25 common collector v ge 0 reverse recovery time t rr (ns) di/dt (a/ s) i rr , t rr ? di/dt peak reverse recovery current i rr (a) 100 80 60 40 20 0 0 40 80 120 160 240 200 common collector i f 60 a tc 25c i r r t r r 1000 500 0 t j 125c v ge 15 v r g 18 1 10 3 1 3 10 100 30 1000 3000 5 30 100 50 300 collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 10 3 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 1 10 0 10 2 tc 25c diode igbt pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) 0 10 20 30 40 60 10 3 100 10 30 1000 i rr t rr common collector di/dt 100 a/ s v ge 0 tc 25c 5 30 50 500 50 50 300 0 3 10 100 10 30 50 1000 300 500 5 30 100 50 300 500 3000 f 1 mhz tc 25c
GT60J322 2002-01-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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